tpsmc6.8 thru tpsmc47a vishay general semiconductor document number: 88407 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 surface mount par ? transient voltage suppressors high temperature st ability and high relia bility conditions typical applications use in sensitive electronics protection against voltage transients induced by indu ctive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automo tive requirement ? available in uni-directional polarity only ? 1500 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs comp liant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal (3) measured on 8.3 ms single hal f sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum primary characteristics v br 6.8 v to 47 v p ppm 1500 w i fsm 200 a t j max. 185 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1)(2) (fig. 3) p ppm 1500 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a peak forward surge current 8.3 ms single half sine-wave (2)(3) i fsm 200 a maximum instantaneous forward voltage at 100 a (2)(3) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
tpsmc6.8 thru tpsmc47a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88407 revision: 09-feb-11 2 notes (1) v br measured after i t applied for 300 s, i t = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consis tent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br (1) at i t (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i r (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. tpsmc6.8 ddp 6.12 7.48 10.0 5.50 1000 10000 139.0 10.8 tpsmc6.8a dep 6.45 7.14 10.0 5.80 1000 10000 143.0 10.5 tpsmc7.5 dfp 6.75 8.25 10.0 6.05 500 5000 128.0 11.7 tpsmc7.5a dgp 7.13 7.88 10.0 6.40 500 5000 133.0 11.3 tpsmc8.2 dhp 7.38 9.02 10.0 6.63 200 2000 120.0 12.5 tpsmc8.2a dkp 7.79 8.61 10.0 7.02 200 2000 124.0 12.1 tpsmc9.1 dlp 8.19 10.0 1.0 7.37 50 500 109.0 13.8 tpsmc9.1a dmp 8.65 9.55 1.0 7.78 50 500 112.0 13.4 tpsmc10 dnp 9.00 11.0 1.0 8.10 20 200 100.0 15.0 tpsmc10a dpp 9.50 10.5 1.0 8.55 20 200 103.0 14.5 tpsmc11 dqp 9.90 12.1 1.0 8.92 5.0 50 92.6 16.2 tpsmc11a drp 10.5 11.6 1.0 9.40 5.0 50 96.2 15.6 tpsmc12 dsp 10.8 13.2 1.0 9.72 2.0 10 86.7 17.3 tpsmc12a dtp 11.4 12.6 1.0 10.2 2.0 10 89.8 16.7 tpsmc13 dup 11.7 14.3 1.0 10.5 2.0 10 78.9 19.0 tpsmc13a dvp 12.4 13.7 1.0 11.1 2.0 10 82.4 18.2 tpsmc15 dwp 13.5 16.5 1.0 12.1 1.0 10 68.2 22.0 tpsmc15a dxp 14.3 15.8 1.0 12.8 1.0 10 70.8 21.2 tpsmc16 dyp 14.4 17.6 1.0 12.9 1.0 10 63.8 23.5 tpsmc16a dzp 15.2 16.8 1.0 13.6 1.0 10 66.7 22.5 tpsmc18 edp 16.2 19.8 1.0 14.5 1.0 10 56.6 26.5 tpsmc18a eep 17.1 18.9 1.0 15.3 1.0 10 59.5 25.2 tpsmc20 efp 18.0 22.0 1.0 16.2 1.0 10 51.5 29.1 tpsmc20a egp 19.0 21.0 1.0 17.1 1.0 10 54.2 27.7 tpsmc22 ehp 19.8 24.2 1.0 17.8 1.0 10 47.0 31.9 tpsmc22a ekp 20.9 23.1 1.0 18.8 1.0 10 49.0 30.6 tpsmc24 elp 21.6 26.4 1.0 19.4 1.0 10 43.2 34.7 tpsmc24a emp 22.8 25.2 1.0 20.5 1.0 10 45.2 33.2 tpsmc27 enp 24.3 29.7 1.0 21.8 1.0 10 38.4 39.1 tpsmc27a epp 25.7 28.4 1.0 23.1 1.0 10 40.0 37.5 tpsmc30 eqp 27.0 33.0 1.0 24.3 1.0 10 34.5 43.5 tpsmc30a erp 28.5 31.5 1.0 25.6 1.0 10 36.2 41.4 tpsmc33 esp 29.7 36.3 1.0 26.8 1.0 10 31.4 47.7 tpsmc33a etp 31.4 34.7 1.0 28.2 1.0 10 32.8 45.7 tpsmc36 eup 32.4 39.6 1.0 29.1 1.0 15 28.8 52.0 tpsmc36a evp 34.2 37.8 1.0 30.8 1.0 15 30.1 49.9 tpsmc39 ewp 35.1 42.9 1.0 31.6 1.0 15 26.6 56.4 tpsmc39a exp 37.1 41.0 1.0 33.3 1.0 15 27.8 53.9 tpsmc43 eyp 38.7 47.3 1.0 34.8 1.0 20 24.2 61.9 tpsmc43a ezp 40.9 45.2 1.0 36.8 1.0 20 25.3 59.3 tpsmc47 fdp 42.3 51.7 1.0 38.1 1.0 20 22.1 67.8 tpsmc47a fep 44.7 49.4 1.0 40.2 1.0 20 23.1 64.8
tpsmc6.8 thru tpsmc47a vishay general semiconductor document number: 88407 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 ? c unless otherwise noted) ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode tpsmc6.8ahe3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel tpsmc6.8ahe3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1.0 10 100 0.31 x 0.31" ( 8 .0 x 8 .0 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms p ppm - peak po w er (k w ) t d - p u lse w idth (s) t a = 25 c n on-repetiti v e p u lse w a v eform sho w n in fig. 3 0 25 50 75 100 0 50 100 150 200 t j - initial temperat u re (c) peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 1 10 100 j u nction capacitance (pf) v br - breakdo w n v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p v r , meas u red at zero bias v r meas u red at stand-off v oltage, v w m
tpsmc6.8 thru tpsmc47a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88407 revision: 09-feb-11 4 package outline dimensions in inches (millimeters) figure 5. maximum non-repetitive/peak forward surge current 200 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 10 50 50 10 1 100 5 t j = t j max. 8 .3 ms single half sine- w a v e cathode band do-214ab (smc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mounting pad layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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